JPS5516497A - Gate turnnoff semiconductor switching device - Google Patents
Gate turnnoff semiconductor switching deviceInfo
- Publication number
- JPS5516497A JPS5516497A JP7310879A JP7310879A JPS5516497A JP S5516497 A JPS5516497 A JP S5516497A JP 7310879 A JP7310879 A JP 7310879A JP 7310879 A JP7310879 A JP 7310879A JP S5516497 A JPS5516497 A JP S5516497A
- Authority
- JP
- Japan
- Prior art keywords
- turnnoff
- gate
- switching device
- semiconductor switching
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/60—Gate-turn-off devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/233—Cathode or anode electrodes for thyristors
Landscapes
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US91556378A | 1978-06-14 | 1978-06-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5516497A true JPS5516497A (en) | 1980-02-05 |
JPS6220713B2 JPS6220713B2 (en]) | 1987-05-08 |
Family
ID=25435941
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7310879A Granted JPS5516497A (en) | 1978-06-14 | 1979-06-12 | Gate turnnoff semiconductor switching device |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5516497A (en]) |
DE (1) | DE2923693A1 (en]) |
FR (1) | FR2428918A1 (en]) |
NL (1) | NL190389C (en]) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57150120U (en]) * | 1981-03-17 | 1982-09-21 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3109892A1 (de) * | 1981-03-14 | 1982-09-23 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Rueckwaerts nicht sperrender thyristor mit kurzer freiwerdezeit |
DE3531631A1 (de) * | 1985-09-05 | 1987-03-05 | Licentia Gmbh | Asymmetrischer thyristor und verfahren zu seiner herstellung |
DE3742638A1 (de) * | 1987-12-16 | 1989-06-29 | Semikron Elektronik Gmbh | Gto-thyristor |
JPH02124295A (ja) * | 1988-10-28 | 1990-05-11 | Ushio Kk | 多軸穿孔装置 |
DE4218398A1 (de) * | 1992-06-04 | 1993-12-09 | Asea Brown Boveri | Hochstrom-Puls-Thyristor sowie Verfahren zu seinem Betrieb |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3504242A (en) * | 1967-08-11 | 1970-03-31 | Westinghouse Electric Corp | Switching power transistor with thyristor overload capacity |
GB1196576A (en) * | 1968-03-06 | 1970-07-01 | Westinghouse Electric Corp | High Current Gate Controlled Switches |
NL165333C (nl) * | 1969-05-20 | Bbc Brown Boveri & Cie | Bestuurbaar halfgeleiderelement met vier laagvormige zones van afwisselend geleidingstype. | |
BE755356A (fr) * | 1969-08-27 | 1971-03-01 | Westinghouse Electric Corp | Interrupteur a semi conducteur a grille de commande pour courant eleve |
US3619738A (en) * | 1969-10-13 | 1971-11-09 | Tokyo Shibaura Electric Co | Semiconductor device with improved connection to control electrode region |
CH526859A (de) * | 1970-11-02 | 1972-08-15 | Bbc Brown Boveri & Cie | Bistabiles Halbleiterbauelement |
US3914781A (en) * | 1971-04-13 | 1975-10-21 | Sony Corp | Gate controlled rectifier |
DE2164644C3 (de) * | 1971-12-24 | 1979-09-27 | Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg | Steuerbarer Halbleitergleichrichter |
IT1041931B (it) * | 1974-09-06 | 1980-01-10 | Rca Corp | Raddrizzatore a semiconduttore commutabile allo stato di non conduzione per mezzo di una tensione applicata al proprio elettrodo di porta |
CH598696A5 (en]) * | 1976-10-08 | 1978-05-12 | Bbc Brown Boveri & Cie | |
JPS54111790A (en) * | 1978-02-22 | 1979-09-01 | Hitachi Ltd | Semiconductor switchgear |
-
1979
- 1979-06-12 DE DE19792923693 patent/DE2923693A1/de active Granted
- 1979-06-12 JP JP7310879A patent/JPS5516497A/ja active Granted
- 1979-06-12 NL NL7904589A patent/NL190389C/xx not_active Application Discontinuation
- 1979-06-13 FR FR7915122A patent/FR2428918A1/fr active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57150120U (en]) * | 1981-03-17 | 1982-09-21 |
Also Published As
Publication number | Publication date |
---|---|
NL7904589A (nl) | 1979-12-18 |
JPS6220713B2 (en]) | 1987-05-08 |
NL190389B (nl) | 1993-09-01 |
NL190389C (nl) | 1994-02-01 |
FR2428918B1 (en]) | 1984-06-29 |
DE2923693C2 (en]) | 1990-12-06 |
FR2428918A1 (fr) | 1980-01-11 |
DE2923693A1 (de) | 1980-01-03 |
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